代表的な論文、
特許など: |
- K. Eriguchi and K. Ono: "Quantitative and comparative characterizations of plasma process-induced damage in advanced metal–oxide–semiconductor devices", J. Phys. D: Appl. Phys. 41, 024002 (2008).
- K. Eriguchi, Y. Nakakubo, A. Matsuda, Y. Takao, and K. Ono: "Model for Bias Frequency Effects on Plasma-Damaged Layer Formation in Si Substrates", Jpn. J. Appl. Phys. 49, 056203 (2010).(応用物理学会優秀論文賞)
- K. Eriguchi, Y. Takao, and K. Ono: "Modeling of plasma-induced damage and its impacts on parameter variations in advanced electronic devices" J. Vac. Sci. Technol. A 29, 041303 (2011).
- K. Eriguchi, A. Matsuda, Y. Takao, and K. Ono: "Effects of straggling of incident ions on plasma-induced damage creation in "fin"-type field-effect transistors", Jpn. J. Appl. Phys. 53, 03DE02 (2014).
- K. Eriguchi, A. Matsuda, Y. Nakakubo, M. Kamei, H. Ohta, and K. Ono: "Effects of Plasma-Induced Si Recess Structure on n-MOSFET Performance Degradation", IEEE Electron Device Lett. 30, 712 (2009).
- K. Eriguchi, Z. Wei, T. Takagi, and K. Ono:"Modeling of field- and time-dependent resistance change phenomena under electrical stresses in Fe-O films", J. Appl. Phys. 107, 014518 (2010).
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